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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10978552 B1

PDFFull Text
Date of Patent:
Apr. 13, 2021

Filed:

Feb. 12, 2019

Semiconductor devices and method of manufacturing the same

Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Jun-goo Kang, Seoul, KR;

Sang-yeol Kang, Yongin-si, KR;

Youn-soo Kim, Yongin-si, KR;

Jin-su Lee, Hwaseong-si, KR;

Hyung-suk Jung, Suwon-si, KR;

Kyu-ho Cho, Seoul, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Gyeonggi-Do, KR;

Attorney:

Harness, Dickey & Pierce, P.L.C.

Primary Examiner:

Asok K Sarkar

Int. Cl.
CPC ...
H01L 49/02 (2006.01); H01L 21/285 (2006.01); C23C 16/40 (2006.01); C23C 16/455 (2006.01); C23C 16/56 (2006.01); H01L 21/02 (2006.01); H01L 21/321 (2006.01); H01L 27/108 (2006.01);
U.S. Cl.
CPC ...
H01L 28/91 (2013.01); C23C 16/405 (2013.01); C23C 16/45525 (2013.01); C23C 16/56 (2013.01); H01L 21/02181 (2013.01); H01L 21/28556 (2013.01); H01L 21/321 (2013.01); H01L 27/10852 (2013.01); H01L 27/10814 (2013.01); H01L 27/10823 (2013.01);
Abstract

A method of manufacturing a semiconductor device includes forming a preliminary lower electrode layer on a substrate, the preliminary lower electrode layer including a niobium oxide; converting at least a portion of the preliminary lower electrode layer to a first lower electrode layer comprising a niobium nitride by performing a nitridation process on the preliminary lower electrode layer; forming a dielectric layer on the first lower electrode layer; and forming an upper electrode on the dielectric layer.

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