The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 13, 2021
Filed:
Nov. 10, 2016
Texas Instruments Incorporated, Dallas, TX (US);
Elizabeth Costner Stewart, Dallas, TX (US);
Jeffrey A. West, Dallas, TX (US);
Thomas D. Bonifield, Dallas, TX (US);
Joseph Andre Gallegos, Dallas, TX (US);
Jay Sung Chun, Plano, TX (US);
Zhiyi Yu, Allen, TX (US);
TEXAS INSTRUMENTS INCORPORATED, Dallas, TX (US);
Abstract
A method of forming an integrated capacitor on a semiconductor surface on a substrate includes etching a capacitor dielectric layer including at least one silicon compound material layer on a bottom plate which is above and electrically isolated from the semiconductor surface to provide at least one defined dielectric feature having sloped dielectric sidewall portion. A dielectric layer is deposited to at least partially fill pits in the sloped dielectric sidewall portion to smooth a surface of the sloped dielectric sidewall portion. The dielectric layer is etched, and a top plate is then formed on top of the dielectric feature.