The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 13, 2021
Filed:
Jul. 06, 2018
Sung Hun Jin, Gyeonggi-do, KR;
Sung Hun Jin, Gyeonggi-do, KR;
Abstract
Provided are a complementary carbon nanotube field effect transistor (CNT-FET) and a manufacturing method thereof. In particular, provided is carbon nanotube-based type conversion technology (p-type→n-type) using a photosensitive polyvinyl alcohol polymer which can be selectively cross-linked at a desired position based on a semiconductor standard process, i.e., photolithography. The CNT-FET includes: a substrate; a first channel layer formed on the substrate and made of a carbon nanotube; a first source electrode formed at one side of the first channel layer and made of a conductive material; a first drain electrode formed at the other side of the first channel layer and made of a conductive material; a conversion induction layer formed on the first channel layer between the first source electrode and the first drain electrode and configured to convert the first channel layer from a p-type to an n-type; a protective layer configured to protect the conversion induction layer; and a first gate electrode formed on the protective layer.