The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 13, 2021
Filed:
Nov. 21, 2018
Hon Hai Precision Industry Co., Ltd., New Taipei, TW;
Hsin-Hua Lin, New Taipei, TW;
Yi-Chun Kao, New Taipei, TW;
HON HAI PRECISION INDUSTRY CO., LTD., New Taipei, TW;
Abstract
An array substrate includes a substrate, a first TFT, a second TFT, and a third TFT. The first TFT includes a first channel layer on the substrate, a first gate insulator layer, a first gate electrode, a first dielectric layer, and a second dielectric layer. The second TFT includes a first semiconductor layer on the substrate, a second gate insulator layer, a second gate electrode, a third dielectric layer, and a second channel layer. The first channel layer is made of a semiconducting material containing polycrystalline silicon. The second channel layer is made of a semiconducting material containing metal oxide. The first dielectric layer is made of silicon nitride; the second dielectric layer and the third dielectric layer are made of silicon oxide.