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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10978469 B1

PDFFull Text
Date of Patent:
Apr. 13, 2021

Filed:

Feb. 27, 2019

Semiconductor storage device having an amorphous layer

Applicant:

Toshiba Memory Corporation, Tokyo, JP;

Inventors:

Kensei Takahashi, Kuwana Mie, JP;

Takashi Asano, Yokkaichi Mie, JP;

Satoshi Wakatsuki, Yokkaichi Mie, JP;

Assignee:

TOSHIBA MEMORY CORPORATION, Tokyo, JP;

Attorney:

Foley & Lardner LLP

Primary Examiner:

Alexander O Williams

Int. Cl.
CPC ...
H01L 27/11582 (2017.01); H01L 29/49 (2006.01); H01L 29/51 (2006.01); H01L 21/285 (2006.01); H01L 21/02 (2006.01); H01L 21/28 (2006.01); H01L 29/04 (2006.01); H01L 29/16 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11582 (2013.01); H01L 21/02178 (2013.01); H01L 21/02271 (2013.01); H01L 21/28556 (2013.01); H01L 21/28568 (2013.01); H01L 29/40117 (2019.08); H01L 29/4966 (2013.01); H01L 29/517 (2013.01); H01L 29/04 (2013.01); H01L 29/1037 (2013.01); H01L 29/16 (2013.01); H01L 29/513 (2013.01); H01L 29/518 (2013.01);
Abstract

A semiconductor storage device includes a semiconductor substrate; an insulating layer provided on the semiconductor substrate; a barrier metal layer provided on the insulating layer; an aluminum compound layer provided on the barrier metal layer; an amorphous layer provided on the aluminum compound layer and including a material that vaporizes upon its chemical reaction with fluorine; and a metal layer provided on the amorphous layer.

Find Patent Forward Citations

Takahashi, Kensei. (2021). Semiconductor storage device having an amorphous layer (U.S. Patent No. 10978469). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10978469

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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