The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 13, 2021
Filed:
Feb. 27, 2019
Applicant:
Toshiba Memory Corporation, Tokyo, JP;
Inventors:
Kensei Takahashi, Kuwana Mie, JP;
Takashi Asano, Yokkaichi Mie, JP;
Satoshi Wakatsuki, Yokkaichi Mie, JP;
Assignee:
TOSHIBA MEMORY CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11582 (2017.01); H01L 29/49 (2006.01); H01L 29/51 (2006.01); H01L 21/285 (2006.01); H01L 21/02 (2006.01); H01L 21/28 (2006.01); H01L 29/04 (2006.01); H01L 29/16 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11582 (2013.01); H01L 21/02178 (2013.01); H01L 21/02271 (2013.01); H01L 21/28556 (2013.01); H01L 21/28568 (2013.01); H01L 29/40117 (2019.08); H01L 29/4966 (2013.01); H01L 29/517 (2013.01); H01L 29/04 (2013.01); H01L 29/1037 (2013.01); H01L 29/16 (2013.01); H01L 29/513 (2013.01); H01L 29/518 (2013.01);
Abstract
A semiconductor storage device includes a semiconductor substrate; an insulating layer provided on the semiconductor substrate; a barrier metal layer provided on the insulating layer; an aluminum compound layer provided on the barrier metal layer; an amorphous layer provided on the aluminum compound layer and including a material that vaporizes upon its chemical reaction with fluorine; and a metal layer provided on the amorphous layer.