The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 13, 2021
Filed:
Jan. 30, 2020
Applicant:
Elpis Technologies Inc., Ottawa, CA;
Inventors:
Brent Alan Anderson, Jericho, VT (US);
Shawn P. Fetterolf, Cornwall, VT (US);
Terence B. Hook, Jericho, VT (US);
Assignee:
ELPIS TECHNOLOGIES INC., Ottawa, CA;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 27/092 (2006.01); H01L 29/78 (2006.01); H01L 27/088 (2006.01); H01L 21/8234 (2006.01); H01L 21/8238 (2006.01); H01L 27/06 (2006.01); H01L 29/423 (2006.01); H01L 29/786 (2006.01); H01L 25/07 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0924 (2013.01); H01L 21/82385 (2013.01); H01L 21/823431 (2013.01); H01L 21/823871 (2013.01); H01L 21/823885 (2013.01); H01L 25/071 (2013.01); H01L 27/0688 (2013.01); H01L 27/0886 (2013.01); H01L 27/092 (2013.01); H01L 29/42384 (2013.01); H01L 29/42392 (2013.01); H01L 29/7827 (2013.01); H01L 29/7831 (2013.01); H01L 29/78642 (2013.01); H01L 29/78645 (2013.01);
Abstract
A semiconductor device includes a first vertical field effect transistor (VFET) formed on a substrate, and including a first fin and a first gate formed on the first fin, a second VFET formed on the substrate and connected to the first VFET, and including a second fin and a second gate formed on the second fin, and a third VFET formed on the substrate and including a third fin, the first gate being formed on the third fin.