The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 13, 2021
Filed:
Jun. 06, 2019
Texas Instruments Incorporated, Dallas, TX (US);
Akram Ali Salman, Plano, TX (US);
Jun Cai, Allen, TX (US);
Krishna Praveen Mysore Rajagopal, Sunnyvale, CA (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
A semiconductor device contains a Zener-triggered transistor having a Zener diode vertically integrated in a first current node of the Zener-triggered transistor. The first current node includes an n-type semiconductor material contacting a p-type semiconductor material in a substrate. The Zener diode includes an n-type cathode contacting the first current node, and a p-type anode contacting the n-type cathode and contacting the p-type semiconductor material. The semiconductor device may be formed using an implant mask, with an opening for the Zener diode. Boron and arsenic are implanted into the substrate in an area exposed by the opening in the implant mask. The substrate is subsequently heated to diffuse and activate the implanted boron and arsenic. The Zener-triggered transistor may be used in an ESD circuit or a snubber circuit.