Analog-mixed signal circuit cells with universal fin pitch and poly pitch

Abstract

An integrated circuit, comprising a transistor-based cell comprising a set of fin field effect transistors (Fin FETs) chained together in a first direction, wherein the set of Fin FETs include fins extending longitudinally along the first direction and equally-spaced apart in a second direction orthogonal to the first direction by a fin pitch, and a set of polysilicon gates extending longitudinally along the second direction and equally-spaced apart in the first direction by a poly pitch, wherein a first dimension of the transistor-based cell along the first direction is substantially a first integer multiplied by the poly pitch, and wherein a second dimension of the transistor-based cell along the second direction is substantially a second integer multiplied by the fin pitch. The integrated circuit may include other non-transistor-based cells (e.g., passive cells), such as thin-film resistor or capacitor cells, which are arranged in a two-dimensional array with the transistor-based cell.