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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10978414 B1

PDFFull Text
Date of Patent:
Apr. 13, 2021

Filed:

Feb. 19, 2020

Semiconductor device and method of manufacturing a semiconductor device

Applicant:

Ablic Inc., Chiba, JP;

Inventors:

Shinjiro Kato, Chiba, JP;

Masaru Akino, Chiba, JP;

Assignee:

ABLIC INC., Chiba, JP;

Attorney:

Brinks Gilson & Lione

Primary Examiner:

Omar F Mojaddedi

Int. Cl.
CPC ...
H01L 23/31 (2006.01); H01L 23/48 (2006.01); H01L 21/02 (2006.01); H01L 29/06 (2006.01); H01L 23/528 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 24/05 (2013.01); H01L 23/3192 (2013.01); H01L 24/03 (2013.01); H01L 2224/0239 (2013.01); H01L 2224/02123 (2013.01); H01L 2224/02166 (2013.01); H01L 2224/02206 (2013.01); H01L 2224/02215 (2013.01); H01L 2224/03011 (2013.01); H01L 2224/03019 (2013.01); H01L 2224/0391 (2013.01); H01L 2224/03826 (2013.01); H01L 2224/04042 (2013.01); H01L 2224/05624 (2013.01); H01L 2224/45139 (2013.01); H01L 2224/45144 (2013.01); H01L 2224/45147 (2013.01); H01L 2224/85205 (2013.01); H01L 2224/85375 (2013.01); H01L 2924/01013 (2013.01); H01L 2924/01014 (2013.01); H01L 2924/01022 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/0132 (2013.01); H01L 2924/0133 (2013.01); H01L 2924/01042 (2013.01); H01L 2924/01073 (2013.01); H01L 2924/01074 (2013.01);
Abstract

A semiconductor device includes a substrate, a wiring formed on the substrate, an anti-reflection film of titanium nitride formed on the wiring, and a silicon oxide film formed on the anti-reflection film. A pad portion which exposes the wiring is formed at a place where a first opening portion and a second opening portion overlap with each other. A metal nitride region containing fewer dangling bonds is formed from a metal nitride film containing fewer dangling bonds than in the anti-reflection film in at least a part of one or both of an opposed surface of the anti-reflection film which faces the silicon oxide film above the anti-reflection film, and an exposed surface of the anti-reflection film which is exposed in the second opening portion.

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