The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 13, 2021

Filed:

Nov. 18, 2016
Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventor:

Michael Simcoe, S. San Francisco, CA (US);

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/66 (2006.01); H01L 23/00 (2006.01); H03F 3/60 (2006.01); H01L 23/48 (2006.01); H01P 5/02 (2006.01); H01L 21/48 (2006.01); H01L 23/498 (2006.01); H01L 25/07 (2006.01); H01L 25/00 (2006.01); H01P 3/08 (2006.01); H03F 1/02 (2006.01); H03F 3/19 (2006.01); H03F 3/21 (2006.01); H01L 21/66 (2006.01); H01L 23/538 (2006.01); H03H 7/38 (2006.01);
U.S. Cl.
CPC ...
H01L 23/66 (2013.01); H01L 21/4846 (2013.01); H01L 23/48 (2013.01); H01L 23/49822 (2013.01); H01L 23/49838 (2013.01); H01L 23/49866 (2013.01); H01L 24/80 (2013.01); H01L 25/072 (2013.01); H01L 25/50 (2013.01); H01P 3/081 (2013.01); H01P 5/028 (2013.01); H03F 1/0288 (2013.01); H03F 3/19 (2013.01); H03F 3/211 (2013.01); H03F 3/60 (2013.01); H01L 22/12 (2013.01); H01L 22/14 (2013.01); H01L 22/20 (2013.01); H01L 23/5389 (2013.01); H01L 2223/6627 (2013.01); H01L 2223/6655 (2013.01); H01L 2223/6661 (2013.01); H03F 2200/222 (2013.01); H03F 2200/255 (2013.01); H03F 2200/387 (2013.01); H03F 2200/423 (2013.01); H03F 2200/451 (2013.01); H03F 2203/21103 (2013.01); H03F 2203/21139 (2013.01); H03H 7/38 (2013.01);
Abstract

An RF power package includes a substrate having a metallized part and an insulating part, an RF power transistor die embedded in or attached to the substrate, the RF power transistor die having a die input terminal, a die output terminal, an input impedance and an output impedance, a package input terminal formed in the metallized part or attached to the insulating part of the substrate, a package output terminal formed in the metallized part or attached to the insulating part of the substrate, and a first plurality of planar tuning lines formed in the metallized part of the substrate and electrically connecting the die output terminal to the package output terminal. The first plurality of planar tuning lines is shaped so as to transform the output impedance at the die output terminal to a higher target level at the package output terminal.


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