The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 13, 2021

Filed:

Oct. 24, 2016
Applicant:

SK Hynix Inc., Icheon-Si, KR;

Inventors:

Dong-Joon Kim, Icheon-si, KR;

Jae-Yun Yi, Icheon-si, KR;

Joon-Seop Sim, Icheon-si, KR;

Assignee:

SK hynix Inc., Icheon-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/528 (2006.01); H01L 27/24 (2006.01); H01L 27/22 (2006.01); G11C 13/00 (2006.01); G11C 11/22 (2006.01); G11C 11/16 (2006.01);
U.S. Cl.
CPC ...
H01L 23/528 (2013.01); H01L 27/228 (2013.01); H01L 27/2436 (2013.01); H01L 27/2463 (2013.01); G11C 11/1659 (2013.01); G11C 11/2255 (2013.01); G11C 13/0026 (2013.01); G11C 2213/79 (2013.01); G11C 2213/82 (2013.01);
Abstract

An electronic device including a semiconductor memory is provided to include a mat region comprising a plurality of memory cells, each including a second transistor; a first switching region located at a side of the mat region and including first transistors; and a second switching region located at the other side of the mat region and including third transistors, wherein the second transistors comprise: a plurality of second active regions; and a plurality of second gate structures extending in the first direction to cross the second active regions, wherein each second active regions is divided into a first side portion, a middle portion and a second side portion that are arranged alternately and repeatedly in the first direction, wherein the first transistors and the third transistors include their active regions and gate structures which are arranged in the same manner as those of the second transistors.


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