The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 13, 2021
Filed:
Sep. 06, 2019
Imec Vzw, Leuven, BE;
Boon Teik Chan, Leuven, BE;
Efrain Altamirano Sanchez, Kessel-Lo, BE;
Ryan Ryoung han Kim, Bertem, BE;
IMEC vzw, Leuven, BE;
Abstract
A substrate includes on its surface an array of dual stack semiconductor fins, each fin comprising a monocrystalline first portion, a polycrystalline second portion, and a mask third portion. Trenches between the fins are filled with shallow trench isolation (STI) oxide and with polycrystalline material, after which the surface is planarized. Then a second mask is produced on the planarized surface, the second mask defining at least one opening, each defined opening extending across an exposed fin. A thermal oxidation is performed of the polycrystalline material on either side of the exposed fin in each defined opening, thereby producing two oxide strips in each defined opening. Using the second mask and the oxide strips as a mask for self-aligned etching, the material of the exposed dual stack fins is removed and subsequently replaced by an electrically isolating material, thereby creating gate cut structures.