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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10978234 B1

PDFFull Text
Date of Patent:
Apr. 13, 2021

Filed:

Feb. 15, 2019

Magnetic stack, multilayer, tunnel junction, memory point and sensor comprising such a stack

Applicants:

Commissariat Á L'énergie Atomique ET Aux Énergies Alternatives, Paris, FR;

Université Grenoble Alpes, Saint Martin d'Hères, FR;

Centre National DE LA Recherche Scientifique (Cnrs), Paris, FR;

Inventors:

Jyotirmoy Chatterjee, Grenoble, FR;

Paulo Veloso Coelho, Grenoble, FR;

Bernard Dieny, Grenoble, FR;

Ricardo Sousa, Grenoble, FR;

Lucian Prejbeanu, Grenoble, FR;

Assignees:

COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, Paris, FR;

UNIVERSITÉ GRENOBLE ALPES, Saint Martin d'Heres, FR;

CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE (CNRS), Paris, FR;

Attorney:

Pillsbury Winthrop Shaw Pittman LLP

Primary Examiner:

Jose R Diaz

Int. Cl.
CPC ...
G06F 1/16 (2006.01); H01L 51/00 (2006.01); G06F 3/044 (2006.01); G06F 3/041 (2006.01); H01L 51/52 (2006.01); H01L 27/32 (2006.01); H01F 10/32 (2006.01); H01L 43/10 (2006.01); H01L 43/02 (2006.01); H01L 27/22 (2006.01); G11C 11/16 (2006.01); G01R 33/09 (2006.01); H01F 10/12 (2006.01); H01F 41/30 (2006.01); H01L 43/12 (2006.01);
U.S. Cl.
CPC ...
H01F 10/3286 (2013.01); G01R 33/098 (2013.01); G11C 11/161 (2013.01); G11C 11/1659 (2013.01); G11C 11/1675 (2013.01); H01F 10/12 (2013.01); H01F 10/3254 (2013.01); H01L 27/224 (2013.01); H01L 27/226 (2013.01); H01L 43/02 (2013.01); H01L 43/10 (2013.01); H01F 41/302 (2013.01); H01L 43/12 (2013.01);
Abstract

A magnetic stack includes a first element including a ferromagnetic layer; a second element including a metal layer able to confer on the assembly formed by the first and the second elements a magnetic anisotropy perpendicular to the plane of the layers. The first element further includes a refractory metal material, the second element being arranged on the first element.

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