The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 13, 2021

Filed:

Jul. 31, 2019
Applicant:

Microsoft Technology Licensing, Llc, Redmond, WA (US);

Inventors:

Stefan Saroiu, Redmond, WA (US);

Lucian Cojocar, Amsterdam, NL;

Alastair Wolman, Seattle, WA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 29/50 (2006.01);
U.S. Cl.
CPC ...
G11C 29/50016 (2013.01);
Abstract

Aspects of the present disclosure relate to techniques for identifying susceptibility to induced charge leakage. In examples, a susceptibility test sequence comprising a cache line flush instruction is used to repeatedly activate a row of a memory unit. The susceptibility test sequence causes induced charge leakage within rows that are physically adjacent to the activated row, such that a physical adjacency map can be generated. In other examples, a physical adjacency map is used to identify a set of adjacent rows to a target row. A susceptibility test sequence is used to repeatedly activate the set of adjacent rows, after which the content of the target row is analyzed to determine whether the any bits of the target row flipped as a result of induced charge leakage. If flipped bits are not identified, an indication is generated that the memory unit is not susceptible to induced charge leakage.


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