The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 13, 2021

Filed:

Nov. 21, 2016
Applicant:

Sharp Kabushiki Kaisha, Sakai, JP;

Inventor:

Masahiro Tomida, Sakai, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02F 1/1368 (2006.01); G02F 1/1362 (2006.01); H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
G02F 1/1368 (2013.01); G02F 1/136286 (2013.01); H01L 27/1225 (2013.01); H01L 27/1251 (2013.01);
Abstract

An active matrix substrate of an embodiment includes a plurality of TFTs provided in a peripheral circuit region. The plurality of TFTs includes a TFT (A) in which, when viewed in a direction perpendicular to a substrate (A), a length in the channel width direction of a source electrode region (AR) and a length in the channel width direction of a drain electrode region (AR), WAs and WAd, are each smaller than a length in the channel width direction of the oxide semiconductor layer (A), WAos, the length in the channel width direction of the oxide semiconductor layer (A), WAos, is smaller than a length in the channel width direction of a gate electrode (A), WAg, and a region in which at least one of the source electrode region (AR) and the drain electrode region (AR) is in contact with the oxide semiconductor layer(A) entirely overlaps the gate electrode (A).


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