The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 13, 2021
Filed:
Feb. 24, 2020
Facebook Technologies, Llc, Menlo Park, CA (US);
Ankit Vora, Bothell, WA (US);
Nihar Ranjan Mohanty, Snoqualmie, WA (US);
Austin Lane, Bellevue, WA (US);
Matthew E. Colburn, Woodinville, WA (US);
Elliott Franke, Bellevue, WA (US);
FACEBOOK TECHNOLOGIES, LLC, Menlo Park, CA (US);
Abstract
Disclosed herein are techniques for fabricating straight or slanted variable-etch-depth gratings. A photoresist material for fabricating a variable-etch-depth grating in a substrate is sensitive to light with a wavelength shorter than 300 nm and has an etch rate comparable to the etch rate of the substrate. A depth of an exposed portion of a photoresist material layer including the photoresist material correlates with the exposure dose. After exposure using a gray-scale mask and development, the photoresist material layer has a non-uniform thickness. The photoresist material layer with the non-uniform thickness and the underlying substrate are etched using a straight etching or slanted etching process to form the straight or slanted variable-etch-depth grating in the substrate. The variable-etch-depth grating is characterized by a non-uniform depth profile corresponding to the non-uniform thickness of the photoresist material layer before etching.