The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 13, 2021

Filed:

Jan. 22, 2019
Applicants:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Samsung Sdi Co., Ltd., Yongin-si, KR;

Inventors:

Jongseok Moon, Suwon-si, KR;

Mijong Kim, Suwon-si, KR;

Sewon Kim, Suwon-si, KR;

Kyueun Shim, Suwon-si, KR;

Sungsoo Han, Hwaseong-si, KR;

Inhyuk Son, Yongin-si, KR;

Jumyeung Lee, Suwon-si, KR;

Minwoo Lim, Hwaseong-si, KR;

Assignees:

SAMSUNG ELECTRONICS CO., LTD., Gyeonggi-Do, KR;

SAMSUNG SDI CO., LTD., Gyeonggi-Do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B32B 9/00 (2006.01); C01B 33/023 (2006.01); H01M 4/38 (2006.01); H01M 4/48 (2010.01); H01M 4/1395 (2010.01); H01M 4/62 (2006.01); H01M 4/36 (2006.01); H01M 4/04 (2006.01); H01M 4/587 (2010.01); C01B 33/00 (2006.01); C01B 32/186 (2017.01); H01L 35/14 (2006.01); H01M 4/583 (2010.01); H01M 4/134 (2010.01); H01M 10/0525 (2010.01); C01B 32/182 (2017.01); C01B 32/20 (2017.01); B82Y 40/00 (2011.01); C01B 33/113 (2006.01);
U.S. Cl.
CPC ...
C01B 33/023 (2013.01); C01B 32/186 (2017.08); C01B 33/00 (2013.01); H01L 35/14 (2013.01); H01M 4/0416 (2013.01); H01M 4/0428 (2013.01); H01M 4/1395 (2013.01); H01M 4/366 (2013.01); H01M 4/386 (2013.01); H01M 4/48 (2013.01); H01M 4/583 (2013.01); H01M 4/587 (2013.01); H01M 4/625 (2013.01); B82Y 40/00 (2013.01); C01B 32/182 (2017.08); C01B 32/20 (2017.08); C01B 33/113 (2013.01); C01P 2004/03 (2013.01); C01P 2004/04 (2013.01); H01M 4/134 (2013.01); H01M 10/0525 (2013.01);
Abstract

A silicon-containing structure including: a silicon composite including a porous silicon secondary particle and a first carbon flake on a surface of the porous silicon secondary particle; a carbonaceous coating layer on the porous silicon composite, the carbonaceous coating layer comprising a first amorphous carbon; and the silicon composite comprises a second amorphous carbon and has a density that is equal to or less than a density of the carbonaceous coating layer, wherein the porous silicon secondary particle includes an aggregate of silicon composite primary particles, each including silicon, a silicon suboxide on a surface of the silicon, and a second carbon flake on a surface of the silicon suboxide.


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