The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 06, 2021

Filed:

Dec. 06, 2017
Applicant:

Sony Semiconductor Solutions Corporation, Kanagawa, JP;

Inventor:

Naoto Yoshikawa, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03F 3/45 (2006.01); H03F 1/32 (2006.01); H03F 1/12 (2006.01); H03F 3/68 (2006.01); H03G 3/30 (2006.01); H04B 1/16 (2006.01);
U.S. Cl.
CPC ...
H03F 1/3205 (2013.01); H03F 1/12 (2013.01); H03F 1/3211 (2013.01); H03F 3/45179 (2013.01); H03F 3/68 (2013.01); H03G 3/3068 (2013.01); H03F 2200/387 (2013.01); H03F 2200/451 (2013.01); H03F 2203/45654 (2013.01); H03G 2201/103 (2013.01); H03G 2201/106 (2013.01); H03G 2201/305 (2013.01); H03G 2201/307 (2013.01); H04B 1/16 (2013.01);
Abstract

This technology relates to a single-phase differential conversion circuit for improving the linearity of input/output characteristics, a signal processing method for use with the circuit, and a reception apparatus. The single-phase differential conversion circuit includes a first source-grounded amplifier and a second source-grounded amplifier. Each of the amplifiers includes a transconductance amplifier section including a transistor for converting an AC component of input potential to a current, a diode load section including a transistor in a diode connection configured as a first load, and a large-signal distortion compensation circuit configured as a second load connected in parallel with the first load. The transistors of the first source-grounded amplifier are each a P-type MOS transistor, and the transistors of the second source-grounded amplifier are each an N-type MOS transistor. This technology is applied advantageously to a reception apparatus for receiving TV signals, for example.


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