The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 06, 2021
Filed:
Apr. 22, 2019
Ablic Inc., Chiba, JP;
Takaaki Hioka, Chiba, JP;
ABLIC INC., Chiba, JP;
Abstract
A semiconductor device includes a first and a second vertical Hall elements formed parallel to each other. Each of the first and the second vertical Hall elements includes: a semiconductor layer on the semiconductor substrate; a Hall voltage output electrode and a first and a second drive current supply electrodes each formed of an impurity region, and sequentially arranged along a straight line on the semiconductor layer; and a first electrode isolation diffusion layer between the first drive current supply electrode and the Hall voltage output electrode, and a second electrode isolation diffusion layer between the Hall voltage output electrode and the second drive current supply electrode. The first and the second drive current supply electrodes each has the second depth deeper than the first depth of the Hall voltage output electrode and the depth of each of the electrode isolation diffusion layers.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile