The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 06, 2021

Filed:

Oct. 24, 2018
Applicant:

Avago Technologies International Sales Pte. Limited, Singapore, SG;

Inventor:

Claudio Piemonte, Regensburg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/107 (2006.01); H01L 31/02 (2006.01); H01L 27/146 (2006.01); H01L 27/144 (2006.01); H01L 31/18 (2006.01); H01L 31/036 (2006.01); H01L 25/16 (2006.01); H01L 31/0232 (2014.01); H01L 31/0236 (2006.01);
U.S. Cl.
CPC ...
H01L 31/107 (2013.01); H01L 25/167 (2013.01); H01L 27/1443 (2013.01); H01L 27/14643 (2013.01); H01L 27/14689 (2013.01); H01L 31/02327 (2013.01); H01L 31/02363 (2013.01); H01L 31/1804 (2013.01);
Abstract

A semiconductor device, sensor, and array of SPAD cubes are described. One example of the disclosed semiconductor device includes an array of single-photon avalanche diodes, each single-photon avalanche diode including an undepleted anode region, an undepleted cathode region, an active depleted region positioned between the anode region and cathode region, and at least one conductive trench extending between the anode region and cathode region. In some examples, the at least one conductive trench surrounds the active depleted region and reflects light back into the active depleted region such that one or more photons can be absorbed within the active depleted region even though an absorption coefficient of the light is greater than a thickness of the active depleted region.


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