The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 06, 2021
Filed:
Jun. 08, 2018
Applicant:
Boe Technology Group Co., Ltd., Beijing, CN;
Inventor:
Zhanjie Ma, Beijing, CN;
Assignee:
BOE TECHNOLOGY GROUP CO., LTD., Beijing, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0224 (2006.01); H01L 31/18 (2006.01); H01L 31/108 (2006.01); H01L 31/0352 (2006.01); H01L 31/20 (2006.01);
U.S. Cl.
CPC ...
H01L 31/022408 (2013.01); H01L 31/03529 (2013.01); H01L 31/035272 (2013.01); H01L 31/1085 (2013.01); H01L 31/1808 (2013.01); H01L 31/202 (2013.01); Y02P 70/50 (2015.11);
Abstract
A photoelectric detection structure, a manufacturing method therefor, and a photoelectric detector. The photoelectric detection structure includes: a base substrate; an electrode strip, which is located on the base substrate; a semiconductor layer, which is located at a side of the base substrate that faces the electrode strip; an insulating layer, which is located between the electrode strip and the semiconductor layer, the insulating layer including a thickness-increased portion, and the thickness-increased portion being located on at least one edge of the electrode strip.