The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 06, 2021
Filed:
Mar. 19, 2019
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Toshiba Electronic Devices & Storage Corporation, Minato-ku, JP;
Takuo Kikuchi, Kamakura, JP;
KABUSHIKI KAISHA TOSHIBA, Minato-ku, JP;
TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION, Minato-ku, JP;
Abstract
A semiconductor device includes a semiconductor body, first and second electrodes and a control electrode. The semiconductor body is positioned between the first and second electrodes. The control electrode is provided between the semiconductor body and the first electrode. The semiconductor body includes a first layer of a first conductivity-type and a second layer of a second conductivity-type alternately arranged along the first electrode. The first and second layers include first and second low-concentration portions, respectively. The first low-concentration portion has a first conductivity-type impurity concentration lower than that in other portion of the first layer. The second low-concentration portion has a second conductivity-type impurity concentration lower than that in other portion of the second layer. The first low-concentration portion is positioned at a level same as a level of the second low-concentration portion in a direction directed toward the first electrode from the second electrode.