The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 06, 2021

Filed:

Oct. 05, 2018
Applicant:

Avago Technologies International Sales Pte. Limited, Singapore, SG;

Inventors:

Qing Liu, Irvine, CA (US);

Akira Ito, Irvine, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 23/528 (2006.01); H01L 29/66 (2006.01); H01L 29/40 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7817 (2013.01); H01L 23/528 (2013.01); H01L 29/407 (2013.01); H01L 29/66681 (2013.01); H01L 29/785 (2013.01);
Abstract

A transistor structure includes a substrate and a fin structure on the substrate. The fin structure includes an undoped portion, a first doped portion, and a second doped portion. The transistor structure includes an electrode on the fin structure between the first doped portion and the second doped portion, and an insulating layer on the fin structure. The transistor structure includes a first trench in the insulating layer at a first side of the fin structure and between the electrode and the second doped portion, and a second trench in the insulating layer at a second side of the fin structure and between the electrode and the second doped portion. The first trench includes a first conductive material, and the second trench includes a second conductive material.


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