The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 06, 2021
Filed:
Jan. 12, 2018
Applicant:
King Abdullah University of Science and Technology, Thuwal, SA;
Inventors:
Amir Nabil Hanna, BeniSuef, EG;
Muhammad Mustafa Hussain, Austin, TX (US);
Assignee:
KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY, Thuwal, SA;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/423 (2006.01); H01L 29/786 (2006.01); H01L 21/28 (2006.01); H01L 21/3065 (2006.01);
U.S. Cl.
CPC ...
H01L 29/6675 (2013.01); H01L 21/28194 (2013.01); H01L 21/3065 (2013.01); H01L 29/4236 (2013.01); H01L 29/78663 (2013.01);
Abstract
A method for producing a thin-film-transistor involves forming a flexible substrate on a rigid substrate, forming a plurality of fins and trenches in a structural layer arranged on the flexible substrate, forming a wavy gate layer, channel layer, source contact layer, and drain contact layer on each of the plurality of fins and each of a plurality of trenches of the structural layer, and removing the plurality of fins and trenches having the wavy gate, channel, source contact, and drain contact layers from the rigid substrate.