The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 06, 2021
Filed:
Dec. 13, 2017
Applicant:
Griffith University, Nathan, AU;
Inventors:
Sima Dimitrijev, Nathan, AU;
Jisheng Han, Nathan, AU;
Assignee:
GRIFFITH UNIVERSITY, Queensland, AU;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/872 (2006.01); H01L 29/16 (2006.01); H01L 29/06 (2006.01); H01L 21/3065 (2006.01); H01L 21/308 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0619 (2013.01); H01L 21/308 (2013.01); H01L 21/3065 (2013.01); H01L 29/0688 (2013.01); H01L 29/1608 (2013.01); H01L 29/6606 (2013.01); H01L 29/872 (2013.01);
Abstract
A silicon carbide (SiC) Schottky diode comprises a layer of N-type SiC and a layer of P-type SiC in contact with the layer of N-type SiC creating a P-N junction. An anode is in contact with both the layer of N-type SiC and the layer of P-type SiC creating Schottky contacts between the anode and both the layer of N-type SiC and the layer of P-type SiC. An edge of the layer of P-type SiC is electrically active and comprises a tapered negative charge density at the P-N junction, which can be achieved by a tapered or sloping edge the layer of P-type SiC.