The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 06, 2021

Filed:

Dec. 18, 2019
Applicant:

Flexenable Limited, Cambridge, GB;

Inventors:

Guillaume Fichet, Cambridge, GB;

Elizabeth Speechley, Cambridge, GB;

Assignee:

Flexenable Limited, Cambridge, GB;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/30 (2006.01); H01L 51/42 (2006.01); H01L 51/44 (2006.01); H01L 51/00 (2006.01);
U.S. Cl.
CPC ...
H01L 27/307 (2013.01); H01L 51/428 (2013.01); H01L 51/441 (2013.01); H01L 51/0003 (2013.01); H01L 51/0021 (2013.01); H01L 51/0035 (2013.01); H01L 51/0037 (2013.01); H01L 51/442 (2013.01);
Abstract

A technique comprising: forming on a support film a first stack of layers defining an array of photodiodes; forming over the first stack of layers in situ on the support film a second stack of layers defining electrical circuitry by which the photoresponse of each photodiode is independently detectable via an array of conductors outside the array of photodiodes; wherein forming the first stack of layers comprises depositing an organic semiconductor material over a first electrode, and depositing a second electrode over the organic semiconductor material, wherein the electrical circuitry comprises transistors including photosensitive semiconductor channels, and the second electrode also functions to substantially block the incidence of light on the photosensitive semiconductor channels from the direction of the support film.


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