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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10971545 B1

PDFFull Text
Date of Patent:
Apr. 06, 2021

Filed:

Jan. 11, 2019

Magnetoresistive stacks and methods therefor

Applicant:

Everspin Technologies, Inc., Chandler, AZ (US);

Inventors:

Sanjeev Aggarwal, Scottsdale, AZ (US);

Kevin Conley, San Jose, CA (US);

Sarin A. Deshpande, Chandler, AZ (US);

Assignee:

Everspin Technologies, Inc., Chandler, AZ (US);

Attorney:

Bookoff McAndrews, PLLC

Primary Examiner:

Jose R Diaz

Int. Cl.
CPC ...
H01L 27/22 (2006.01); G11C 5/06 (2006.01); G11C 5/08 (2006.01); G11C 11/16 (2006.01); H01F 10/32 (2006.01); H01F 41/34 (2006.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H01L 43/02 (2006.01); H01L 43/12 (2006.01);
U.S. Cl.
CPC ...
H01L 27/228 (2013.01); G11C 5/06 (2013.01); G11C 5/08 (2013.01); G11C 11/161 (2013.01); H01F 10/329 (2013.01); H01F 10/3254 (2013.01); H01F 10/3272 (2013.01); H01F 10/3286 (2013.01); H01F 41/34 (2013.01); H01L 21/76802 (2013.01); H01L 21/76877 (2013.01); H01L 23/528 (2013.01); H01L 23/5226 (2013.01); H01L 27/222 (2013.01); H01L 43/02 (2013.01); H01L 43/12 (2013.01); G11C 2211/5615 (2013.01);
Abstract

A magnetoresistive device may include multiple magnetic tunnel junction (MTJ) stacks separated from each other by one or more dielectric material layers and electrically conductive vias extending through the one more dielectric material layers. Each MTJ stack may include multiple MTJ bits arranged one on top of another and the electrically conductive vias may be configured to electrically access each MTJ bit of the multiple MTJ stacks.

Find Patent Forward Citations

Aggarwal, Sanjeev. (2021). Magnetoresistive stacks and methods therefor (U.S. Patent No. 10971545). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10971545

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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