The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 06, 2021
Filed:
Sep. 19, 2018
Applicant:
Raytheon Company, Waltham, MA (US);
Inventors:
John J. Drab, Santa Barbara, CA (US);
Justin Gordon Adams Wehner, Goleta, CA (US);
Christian M. Boemler, Lompoc, CA (US);
Assignee:
Raytheon Company, Waltham, MA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H01L 27/144 (2006.01); H01L 29/868 (2006.01); H01L 31/105 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14643 (2013.01); H01L 27/1446 (2013.01); H01L 27/14605 (2013.01); H01L 27/14649 (2013.01); H01L 27/14689 (2013.01); H01L 29/868 (2013.01); H01L 31/105 (2013.01);
Abstract
A semiconductor structure having: a silicon structure; and a plurality of laterally spaced PiN diodes formed in the silicon structure; and a surface of the silicon structure configured to reduce reverse bias leakage current through the PiN diodes. In one embodiment, a gate electrode structures is disposed on a surface of the silicon structure, the gate electrode structure having portions disposed between adjacent pairs of the diodes, the gate structure being biased to prevent leakage current through the diodes.