The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 06, 2021

Filed:

Jan. 06, 2020
Applicant:

Sensors Unlimited, Inc., Princeton, NJ (US);

Inventors:

Prabhu Mushini, Annandale, NJ (US);

Wei Huang, Painsborough, NJ (US);

Assignee:

Sensors Unlimited, Inc., Princeton, NJ (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H01L 31/0216 (2014.01); H01L 31/0224 (2006.01); H01L 31/103 (2006.01); H01L 31/0352 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14605 (2013.01); H01L 27/14649 (2013.01); H01L 31/02161 (2013.01); H01L 31/022416 (2013.01); H01L 31/03529 (2013.01); H01L 31/1035 (2013.01);
Abstract

A photodiode has an absorption layer and a cap layer operatively connected to the absorption layer. A pixel is formed in the cap layer and extends into the absorption layer to receive charge generated from photons therefrom. The pixel defines an annular diffused area to reduce dark current and capacitance. A photodetector includes the photodiode. The photodiode includes an array of pixels formed in the cap layer. At least one of the pixels extends into the absorption layer to receive charge generated from photons therefrom. At least one of the pixels defines an annular diffused area to reduce dark current and capacitance.


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