The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 06, 2021

Filed:

Sep. 18, 2018
Applicant:

Wuhan China Star Optoelectronics Technology Co., Ltd., Wuhan, CN;

Inventors:

Guanghui Liu, Wuhan, CN;

Peng He, Wuhan, CN;

Yong Xu, Wuhan, CN;

Fei Ai, Wuhan, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1288 (2013.01); H01L 27/127 (2013.01); H01L 27/1222 (2013.01);
Abstract

A manufacturing method for TFT array substrate and TFT array substrate are disclosed. After depositing an electrode material layer and a metal material layer on the gate insulation layer and the active layer in sequence after the active layer above the gate electrode is formed. A photoresist pattern is formed on the metal material layer. The photoresist pattern includes a first and second photoresist blocks with different thicknesses. The metal material layer and the electrode material layer are etched using the photoresist pattern to form a contact electrode and pixel electrodes connected with two ends of the active layer and the source/drain electrodes on the contact electrode. The process is simple and can effectively reduce the contact resistance between the source/drain and the active layer and improve the quality of the product.


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