The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 06, 2021

Filed:

Jun. 08, 2018
Applicant:

Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd., Guangdong, CN;

Inventors:

Zhichao Zhou, Guangdong, CN;

Hui Xia, Guangdong, CN;

Meng Chen, Guangdong, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1222 (2013.01); H01L 27/127 (2013.01); H01L 27/1225 (2013.01);
Abstract

The present invention teaches a TFT array substrate and its manufacturing method including the following steps. A data line and a ring-shaped source electrode are formed on a substrate. A first insulation layer is formed on the substrate. A ring trough exposing the source electrode is formed on the first insulation layer. A semiconductor active layer is formed in the ring trough. A channel is formed on the first insulation layer in an area surrounded by the ring trough. A gate line, a gate electrode in the channel, and a drain electrode connected to the semiconductor active layer are formed on the first insulation layer. A second insulation layer is formed on the first insulation layer, and a pixel via is formed on the second insulation layer. A pixel electrode is formed on the second insulation layer, and is connected to the drain electrode through the pixel via.


Find Patent Forward Citations

Loading…