The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 06, 2021
Filed:
Jul. 10, 2019
Powerchip Semiconductor Manufacturing Corporation, Hsinchu, TW;
Zih-Song Wang, Nantou County, TW;
Chen-Liang Ma, Taoyuan, TW;
Powerchip Semiconductor Manufacturing Corporation, Hsinchu, TW;
Abstract
A non-volatile memory structure including a substrate, a stacked structure, a conductive pillar, a channel layer, a charge storage structure, and a second dielectric layer is provided. The stacked structure is disposed on the substrate and has an opening. The stacked structure includes first conductive layers and first dielectric layers alternately stacked. The conductive pillar is disposed in the opening. The channel layer is disposed between the stacked structure and the conductive pillar. The charge storage structure is disposed between the stacked structure and the channel layer. The second dielectric layer is disposed between the channel layer and the conductive pillar. The non-volatile memory structure can effectively improve the electrical performance and the reliability of the memory device.