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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10971491 B1

PDFFull Text
Date of Patent:
Apr. 06, 2021

Filed:

May. 29, 2018

Method for forming capacitor, semiconductor device, module, and electronic device

Applicant:

Semiconductor Energy Laboratory Co., Ltd., Atsugi, JP;

Inventors:

Tetsuhiro Tanaka, Kiyose, JP;

Yutaka Okazaki, Isehara, JP;

Assignee:

Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken, JP;

Attorneys:

Robinson Intellectual Property Law Office

Eric J. Robinson

Primary Examiner:

Kyoung Lee

Assistant Examiner:

Christina A Sylvia

Int. Cl.
CPC ...
H01L 27/07 (2006.01); H01L 29/786 (2006.01); H01L 29/94 (2006.01); H01L 27/12 (2006.01); H01G 4/008 (2006.01); H01G 4/10 (2006.01); H01G 4/40 (2006.01); H01L 29/66 (2006.01); H05K 1/18 (2006.01); H01L 21/8258 (2006.01); H01L 27/06 (2006.01); H01L 27/1156 (2017.01);
U.S. Cl.
CPC ...
H01L 27/0733 (2013.01); H01G 4/008 (2013.01); H01G 4/105 (2013.01); H01G 4/40 (2013.01); H01L 27/1225 (2013.01); H01L 27/1255 (2013.01); H01L 29/66477 (2013.01); H01L 29/7869 (2013.01); H01L 29/78648 (2013.01); H01L 29/78696 (2013.01); H01L 29/94 (2013.01); H05K 1/18 (2013.01); H01L 21/8258 (2013.01); H01L 27/0629 (2013.01); H01L 27/0688 (2013.01); H01L 27/1156 (2013.01); H05K 2201/10015 (2013.01); H05K 2201/10083 (2013.01); H05K 2201/10166 (2013.01);
Abstract

A miniaturized transistor is provided. A transistor with low parasitic capacitance is provided. A transistor having high frequency characteristics is provided. A transistor having a large amount of on-state current is provided. A semiconductor device including the transistor is provided. A semiconductor device with high integration is provided. A novel capacitor is provided. The capacitor includes a first conductor, a second conductor, and an insulator. The first conductor includes a region overlapping with the second conductor with the insulator provided therebetween. The first conductor includes tungsten and silicon. The insulator includes a silicon oxide film that is formed by oxidizing the first conductor.

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