The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 06, 2021

Filed:

Nov. 20, 2019
Applicant:

Nichia Corporation, Anan, JP;

Inventors:

Atsushi Yamamoto, Komatsushima, JP;

Keiko Ono, Anan, JP;

Saiki Yamamoto, Tokushima, JP;

Tomokazu Maruyama, Anan, JP;

Takeshi Morikawa, Tokushima, JP;

Seitaro Akagawa, Komatsushima, JP;

Assignee:

NICHIA CORPORATION, Anan, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
F21V 7/04 (2006.01); H01L 25/075 (2006.01); H01L 33/50 (2010.01); H01L 33/62 (2010.01); F21V 8/00 (2006.01); H01L 33/48 (2010.01);
U.S. Cl.
CPC ...
H01L 25/0753 (2013.01); H01L 33/508 (2013.01); H01L 33/62 (2013.01); G02B 6/0073 (2013.01); H01L 33/486 (2013.01); H01L 33/502 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48137 (2013.01); H01L 2224/48247 (2013.01); H01L 2224/48257 (2013.01); H01L 2924/181 (2013.01);
Abstract

The light-emitting device includes a first light-emitting element having an emission peak wavelength of 430 nm or more and less than 490 nm, a second light-emitting element having an emission peak wavelength of 490 nm or more and 570 nm or less, a support body at which the first light-emitting element and the second light-emitting element are disposed, and a light-transmissive member containing a red phosphor and covering the first light-emitting element and the second light-emitting element. A content density of the red phosphor in the light-transmissive member in a space between the first and second light-emitting elements is higher in a part below an upper surface of the second light-emitting element than in a part above the upper surface thereof.


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