The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 06, 2021
Filed:
Nov. 01, 2019
V Technology Co., Ltd., Yokohama, JP;
Michinobu Mizumura, Yokohama, JP;
V TECHNOLOGY CO., LTD., Yokohama, JP;
Abstract
A laser annealing method is for irradiating an amorphous silicon film formed on a substratewith laser beams and crystalizing the amorphous silicon film, wherein a plurality of first and second TFT formation portionson the substrateare irradiated with laser beams at differing irradiation doses so as to crystalize the amorphous silicon film in the first TFT formation portionsinto a polysilicon film having a crystalline state and crystalize the amorphous silicon film in the second TFT formation portionsinto a polysilicon film having another crystalline state that is different from that of the polysilicon film in the first TFT formation portions