The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 06, 2021
Filed:
Mar. 08, 2019
Shin-etsu Polymer Co., Ltd., Tokyo, JP;
Shin-etsu Chemical Co., Ltd., Tokyo, JP;
National University Corporation Saitama University, Saitama, JP;
Junichi Ikeno, Saitama, JP;
Yohei Yamada, Saitama, JP;
Hideki Suzuki, Saitama, JP;
Hitoshi Noguchi, Annaka, JP;
SHIN-ETSU POLYMER CO., LTD., Tokyo, JP;
SHIN-ETSU CHEMICAL CO., LTD., Tokyo, JP;
NATIONAL UNIVERSITY CORPORATION SAITAMA UNIVERSITY, Saitama, JP;
Abstract
A substrate manufacturing method capable of easily obtaining a thin magnesium oxide single crystal substrate is provided. A first step is performed which disposes a condenser for condensing a laser beam on an irradiated surface of a magnesium oxide single crystal member in a non-contact manner. A second step is performed which forms processing mark lines in parallel by irradiating the laser beam to the surface of the single crystal substrate under designated irradiation conditions to condense the laser beam into an inner portion of the single crystal substrate while moving the condenser and the single crystal substrate relative to each other in a two-dimensional manner. A third step is performed which forms new processing mark lines between the adjacent irradiation lines in the second step to allow planar separation, by irradiating the laser beam to the surface of the single crystal substrate under designated irradiation conditions to condense the laser beam into an inner portion of the single crystal substrate while moving the condenser and the single crystal substraterelative to each other in a two-dimensional manner.