The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 06, 2021

Filed:

Nov. 21, 2019
Applicant:

Vanguard International Semiconductor Corporation, Hsinchu, TW;

Inventors:

Kwang-Ming Lin, Taichung, TW;

Yung-Fong Lin, Taoyuan, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 29/205 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0214 (2013.01); H01L 21/02389 (2013.01); H01L 21/02425 (2013.01); H01L 21/02428 (2013.01); H01L 29/205 (2013.01);
Abstract

A substrate includes a ceramic core, a first adhesion layer, a barrier layer, and a second adhesion layer. The first adhesion layer encapsulates the ceramic core and includes silicon oxynitride, wherein the atomic number ratio of oxygen to nitrogen in silicon oxynitride of the first adhesion layer has a first ratio. The barrier layer encapsulates the first adhesion layer and includes silicon oxynitride, wherein the atomic number ratio of oxygen to nitrogen in silicon oxynitride of the barrier layer has a second ratio that is different from the first ratio. The second adhesion layer encapsulates the barrier layer and includes silicon oxynitride, wherein the atomic number ratio of oxygen to nitrogen in silicon oxynitride of the second adhesion layer has a third ratio that is different from the second ratio.


Find Patent Forward Citations

Loading…