The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 06, 2021
Filed:
Apr. 26, 2019
Applicant:
SK Hynix Inc., Gyeonggi-do, KR;
Inventors:
Hyun Woo Lee, Gyeonggi-do, KR;
Young Gyun Kim, Seoul, KR;
Assignee:
SK hynix Inc., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G06F 3/06 (2006.01); G06F 11/10 (2006.01); G11C 29/52 (2006.01); G11C 16/34 (2006.01); G06F 12/02 (2006.01); G11C 11/56 (2006.01); G11C 16/26 (2006.01); G11C 13/00 (2006.01); G11C 16/16 (2006.01);
U.S. Cl.
CPC ...
G06F 3/065 (2013.01); G06F 3/064 (2013.01); G06F 3/0619 (2013.01); G06F 3/0673 (2013.01); G06F 11/1068 (2013.01); G11C 29/52 (2013.01); G06F 12/0246 (2013.01); G06F 2212/7211 (2013.01); G11C 11/5628 (2013.01); G11C 11/5642 (2013.01); G11C 13/004 (2013.01); G11C 16/16 (2013.01); G11C 16/26 (2013.01); G11C 16/349 (2013.01); G11C 16/3418 (2013.01); G11C 16/3427 (2013.01); G11C 2211/5641 (2013.01);
Abstract
A memory system includes: a memory cell array including a plurality of memory blocks; a peripheral circuit configured to perform a read operation on a selected memory block among the plurality of memory blocks and a backup program operation on a backup block among the plurality of memory blocks; and a control circuit configured to control the peripheral circuit to backup data of logical pages included in the selected memory block in the backup block, when a read count of a selected physical page of the selected memory block is equal to or larger than a set value in the read operation on the selected memory block.