The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 06, 2021
Filed:
Apr. 05, 2018
Toyota Jidosha Kabushiki Kaisha, Toyota-shi, Aichi-ken, JP;
Masayoshi Doi, Nagoya, JP;
Hironori Daikoku, Susono, JP;
Motohisa Kado, Gotemba, JP;
Tomohiro Sato, Tajimi, JP;
Kazuaki Seki, Futtsu, JP;
Kazuhiko Kusunoki, Nishinomiya, JP;
Yutaka Kishida, Kisarazu, JP;
TOYOTA JIDOSHA KABUSHIKI KAISHA, Toyota, JP;
Abstract
A method for a SiC single crystal that allow prolonged growth to be achieved are provided. A method for producing a SiC single crystal in which a seed crystal substrate held on a seed crystal holding shaft is contacted with a Si—C solution having a temperature gradient such that a temperature of the Si—C solution decreases from an interior of the Si—C solution toward a liquid level of the Si—C solution, in a graphite crucible, to grow a SiC single crystal, wherein the method comprises the steps of: electromagnetic stirring of the Si—C solution with an induction coil to produce a flow, and heating of a lower part of the graphite crucible with a resistance heater.