The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 30, 2021
Filed:
Jun. 26, 2017
Applicant:
Murata Manufacturing Co., Ltd., Nagaokakyo, JP;
Inventors:
Yasuhiro Aida, Nagaokakyo, JP;
Keiichi Umeda, Nagaokakyo, JP;
Assignee:
MURATA MANUFACTURING CO., LTD., Nagaokakyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03H 9/17 (2006.01); C23C 14/06 (2006.01); H03H 9/02 (2006.01); H03H 9/24 (2006.01); H03H 9/05 (2006.01); H03H 3/02 (2006.01); H03H 9/56 (2006.01); H03H 9/15 (2006.01); H03H 3/04 (2006.01);
U.S. Cl.
CPC ...
H03H 9/172 (2013.01); C23C 14/06 (2013.01); C23C 14/0617 (2013.01); H03H 3/02 (2013.01); H03H 9/02448 (2013.01); H03H 9/0595 (2013.01); H03H 9/2489 (2013.01); H03H 9/564 (2013.01); H03H 9/02031 (2013.01); H03H 2003/027 (2013.01); H03H 2003/0407 (2013.01); H03H 2003/0435 (2013.01); H03H 2009/0248 (2013.01); H03H 2009/155 (2013.01);
Abstract
A piezoelectric film that includes crystalline AlN; at least one first element partially replacing Al in the crystalline AlN; and a second element doping the crystalline AlN and which has an ionic radius smaller than that of the first element and larger than that of Al.