The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 30, 2021
Filed:
Sep. 25, 2018
Texas Instruments Incorporated, Dallas, TX (US);
Gerhard Thiele, Dachau, DE;
Manuel Wiersch, Freising, DE;
TEXAS INSTRUMENTS INCORPORATED, Dallas, TX (US);
Abstract
An integrated circuit comprising: a high-side pMOSFET comprising a drain and a gate; a node coupled to the drain of the high-side pMOSFET; a voltage-to-current circuit comprising a first nMOSFET and a first resistor, the first nMOSFET comprising a gate and a source, the first resistor comprising a terminal coupled to the source of the first nMOSFET; an error amplifier comprising an output port coupled to the gate of the first nMOSFET; a skip clamp nMOSFET comprising a source coupled to the output port of the error amplifier; and a current limit clamp pMOSFET comprising a source coupled to the output port of the error amplifier.