The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 30, 2021

Filed:

Nov. 14, 2019
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Heinz Schmid, Waedenswil, CH;

Benedikt F. Mayer, Munich, DE;

Stephan Wirths, Thalwil, CH;

Kirsten Emilie Moselund, Rueschlikon, CH;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/00 (2006.01); H01S 5/10 (2021.01); H01S 5/026 (2006.01); H01S 5/042 (2006.01); H01S 5/22 (2006.01); H01S 5/02 (2006.01); H01S 5/32 (2006.01); H01S 5/343 (2006.01); H01S 5/30 (2006.01); H01S 5/347 (2006.01);
U.S. Cl.
CPC ...
H01S 5/1046 (2013.01); H01S 5/021 (2013.01); H01S 5/026 (2013.01); H01S 5/042 (2013.01); H01S 5/0422 (2013.01); H01S 5/22 (2013.01); H01S 5/32 (2013.01); H01S 5/3013 (2013.01); H01S 5/3018 (2013.01); H01S 5/343 (2013.01); H01S 5/347 (2013.01);
Abstract

A plasmonic quantum well laser may be provided. The plasmonic quantum well laser includes a plasmonic waveguide and a p-n junction structure extends orthogonally to a direction of plasmon propagation along the plasmonic waveguide. Thereby, the p-n junction is positioned atop a dielectric material having a lower refractive index than material building the p-n junction, and the quantum well laser is electrically actuated. A method for building the plasmonic quantum well laser is also provided.


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