The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 30, 2021

Filed:

Jan. 24, 2017
Applicant:

Flexterra, Inc., Skokie, IL (US);

Inventors:

Viviana Biondo, Illegio Tolmezzo, IT;

Gianluca Generali, Bologna, IT;

Andrea Stefani, Trento, IT;

Michele Muccini, Bologna, IT;

Guido Turatti, Bosco Mesola, IT;

Mitchell Denti, Chicago, IL (US);

Hakan Usta, Kayseri, TR;

Xiaoyan Chen, Glenview, IL (US);

Antonio Facchetti, Chicago, IL (US);

Assignee:

Flexterra Inc., Skokie, IL (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 51/52 (2006.01); H01L 51/00 (2006.01); C07D 495/04 (2006.01); H01L 51/05 (2006.01); H01L 51/50 (2006.01);
U.S. Cl.
CPC ...
H01L 51/5296 (2013.01); H01L 51/0074 (2013.01); H01L 51/0085 (2013.01); C07D 495/04 (2013.01); H01L 51/0061 (2013.01); H01L 51/0072 (2013.01); H01L 51/0562 (2013.01); H01L 51/5012 (2013.01); H01L 51/5016 (2013.01); H01L 2251/301 (2013.01); H01L 2251/303 (2013.01); H01L 2251/305 (2013.01); H01L 2251/308 (2013.01);
Abstract

The present teachings relate to an organic electroluminescent transistor with improved light-emission characteristics. More specifically, the present organic electroluminescent transistor has an emissive ambipolar channel including at least one layer of an n-type semiconductor material, at least one layer of a p-type semiconductor material, and at least one layer of an emissive material arranged between the layers of the p-type and n-type semiconductor materials, where the multilayer emissive ambipolar channel includes, among various layers, a layer of a p-type semiconductor material comprising a benzothieno-benzothiophene compound, and/or a layer of an emissive material comprising a blend material that includes an organic carbazole derivative as the host matrix compound and an iridium complex as the guest emitter.


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