The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 30, 2021
Filed:
Sep. 13, 2018
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Toshiba Electronic Devices & Storage Corporation, Minato-ku, JP;
Koichi Kokubun, Yokohama, JP;
Nobu Matsumoto, Ebina, JP;
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Toshiba Electronic Devices & Storage Corporation, Minato-ku, JP;
Abstract
A photodetector includes: a silicon layer of a first conductivity type; a first semiconductor layer that is provided in the silicon layer, of a first conductivity type, and having an impurity concentration higher than a carrier concentration of the silicon layer; a second semiconductor layer provided on the first semiconductor layer, of a second conductivity type, and forming a pn boundary with the first semiconductor layer; a third semiconductor layer provided in the silicon layer, of a first conductivity type, having an impurity concentration higher than that of the silicon layer, and separated from the first semiconductor layer; a first electrode connected to the silicon layer; and a second electrode connected to the second semiconductor layer.