Ingan-based resonant cavity enhanced detector chip based on porous dbr

Abstract

An InGaN-based resonant cavity enhanced detector chip based on porous DBR, including: a substrate (); a buffer layer () formed on the substrate (); a bottom porous DBR layer () formed on the buffer layer (); an n-type GaN layer () formed on the bottom porous DBR layer (), wherein one side of the n-type GaN layer () is recessed downward to form a mesa ('), and the other side of the n-type GaN layer () is protruded; an active region () formed on the n-type GaN layer (); a p-type GaN layer () formed on the active region (); a sidewall passivation layer () formed on an upper surface of the p-type GaN layer () and sidewalls of the protruded n-type GaN layer (), the active region (), and the p-type GaN layer (), wherein the sidewall passivation layer () on the upper surface of the p-type GaN layer () has a window in a middle; a transparent conductive layer () formed on the sidewall passivation layer () and the p-type GaN layer () at the window; an n-type electrode () formed on the mesa of the n-type GaN layer (); a p-type electrode () formed on a periphery of an upper surface of the sidewall passivation layer (); a top dielectric DBR layer () formed on the transparent conductive layer () and the p-type electrode ().