The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 30, 2021

Filed:

Mar. 12, 2020
Applicant:

Denso Corporation, Kariya, JP;

Inventors:

Masato Noborio, Kariya, JP;

Masayasu Ishiko, Nagakute, JP;

Jun Saito, Toyota, JP;

Assignee:

DENSO CORPORATION, Kariya, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 21/265 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/16 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7813 (2013.01); H01L 21/26513 (2013.01); H01L 29/0619 (2013.01); H01L 29/0696 (2013.01); H01L 29/0865 (2013.01); H01L 29/1608 (2013.01); H01L 29/41741 (2013.01); H01L 29/4236 (2013.01); H01L 29/66068 (2013.01); H01L 29/66734 (2013.01); H01L 29/7811 (2013.01);
Abstract

A semiconductor device comprises: a cell region that includes a semiconductor element; an outer peripheral region that surrounds an outer periphery of the cell region; a substrate that has a front surface and a back surface, and is made of a semiconductor of a first or second conductivity type; a first conductivity layer that is formed on the front surface of the substrate and made of the semiconductor of the first conductivity type having a lower impurity concentration than impurity concentration of the substrate; a first electrode that is provided on an opposite side of the substrate across the first conductivity layer, the first electrode being provided in the semiconductor element; and a second electrode that is placed toward the back surface of the substrate, the second electrode being provided in the semiconductor element.


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