The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 30, 2021
Filed:
Sep. 14, 2018
Wuhan China Star Optoelectronics Technology Co., Ltd., Wuhan, CN;
Abstract
The present invention teaches a TFT substrate manufacturing method and a TFT substrate. The method configures contact region vias in the source/drain contact regions at two ends of the active layer, provides buffer layer troughs in the buffer layer beneath the contact region vias, and forms undercut structure between the buffer layer troughs and the active layer around the contact region vias, thereby separating the transparent conductive layer at the contact region vias, and extending the source/drain electrodes to contact the source/drain contact regions of the active layer from below through the buffer layer troughs. The present invention therefore prevents the occurrence of Schottky contact barrier resulted from the contact between poly-Si and ITO in the 7-mask process by letting the source/drain electrodes to directly contact and form ohmic contact with the source/drain contact regions of the active layer, thereby enhancing the electronic mobility of TFT devices.