The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 30, 2021
Filed:
Nov. 27, 2019
Vanguard International Semiconductor Corporation, Hsinchu, TW;
Chih-Yen Chen, Tainan, TW;
Chia-Ching Huang, Taoyuan, TW;
VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION, Hsinchu, TW;
Abstract
A semiconductor device includes a semiconductor layer, a gate electrode disposed on the semiconductor layer, a first dielectric layer disposed on the semiconductor layer and the gate electrode, a source field plate disposed on the semiconductor layer and the first dielectric layer, a second dielectric layer disposed on the source field plate, and a source electrode disposed on the second dielectric layer and electrically connected to the source field plate. The gate electrode has a first sidewall and a second sidewall respectively disposed on the first side and the second side. The source field plate extends from the first side to the second side. A portion of the source field plate is disposed to correspond to the second sidewall. The semiconductor device further includes a third dielectric layer disposed on the source electrode and a drain structure disposed on the second side.