The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 30, 2021
Filed:
May. 01, 2018
Sumitomo Electric Industries, Ltd., Osaka, JP;
Shinya Fujiwara, Osaka, JP;
Tomoaki Miyoshi, Osaka, JP;
SUMITOMO ELECTRIC INDUSTRIES, LTD., Osaka, JP;
Abstract
An InP substrate that is a group III-V compound semiconductor substrate includes particles of greater than or equal to 0.19 μm in particle size at less than or equal to 0.22 particles/cmor particles of greater than or equal to 0.079 μm in particle size at less than or equal to 20 particles/cmon the main surface. An epilayer-attached InP substrate that is an epilayer-attached group III-V compound semiconductor substrate includes the InP substrate mentioned above and an epitaxial layer disposed on the main surface of the InP substrate, and includes LPDs of greater than or equal to 0.24 μm in circle-equivalent diameter at less than or equal to 10 defects/cmor LPDs of greater than or equal to 0.136 μm in circle-equivalent diameter at less than or equal to 30 defects/cmon the main surface in a case where the epitaxial layer has a thickness of 0.3 μm.