The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 30, 2021

Filed:

Dec. 16, 2019
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Min-Chul Sun, Yongin-si, KR;

Dae Won Ha, Seoul, KR;

Dong Hoon Hwang, Hwaseong-si, KR;

Jong Hwa Baek, Yongin-si, KR;

Jong Min Jeon, Suwon-si, KR;

Seung Mo Ha, Seoul, KR;

Kwang Yong Yang, Seoul, KR;

Jae Young Park, Yongin-si, KR;

Young Su Chung, Suwon-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 27/088 (2006.01); H01L 21/8234 (2006.01); H01L 21/762 (2006.01); H01L 27/11 (2006.01); H01L 29/417 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0649 (2013.01); H01L 21/76224 (2013.01); H01L 21/823431 (2013.01); H01L 21/823481 (2013.01); H01L 27/0886 (2013.01); H01L 27/1104 (2013.01); H01L 27/1116 (2013.01); H01L 29/41791 (2013.01);
Abstract

A semiconductor device including a device isolation region is provided. The semiconductor device includes first active regions disposed on a substrate, and an isolation region between the active regions. The isolation region includes a first portion formed of a first insulating material, and a second portion formed of a second insulating material, having different characteristics from those of the first insulating material. The first portion is closer to the first active regions than the second portion. The second portion has a bottom surface having a height different from that of a bottom surface of the first portion.


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